In-situ measurement of crystalline-amorphous transition in si substrates during ion implantation

Pieter L. Swart; Beatrys M. Lacquet; Herzl Aharoni

doi:10.1109/23.277546

In-situ measurement of crystalline-amorphous transition in si substrates during ion implantation

Pieter L. Swart, Beatrys M. Lacquet, Herzl Aharoni

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In situ reflectometry during ion implantation of³¹P⁺ into single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 μ A/cm², has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph, and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose, and the work required for phase change, are calculated from the experimental data.

Original language	English
Pages (from-to)	464-467
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/23.277546
State	Published - 1 Jan 1992

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "In-situ measurement of crystalline-amorphous transition in si substrates during ion implantation",

abstract = "In situ reflectometry during ion implantation of31P+ into single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 μ A/cm2, has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph, and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose, and the work required for phase change, are calculated from the experimental data.",

author = "Swart, {Pieter L.} and Lacquet, {Beatrys M.} and Herzl Aharoni",

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AU - Swart, Pieter L.

AU - Lacquet, Beatrys M.

AU - Aharoni, Herzl

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N2 - In situ reflectometry during ion implantation of31P+ into single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 μ A/cm2, has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph, and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose, and the work required for phase change, are calculated from the experimental data.

AB - In situ reflectometry during ion implantation of31P+ into single crystal Si substrates at implantation energies between 50 and 240 keV, and using a dose rate of 0.2 μ A/cm2, has yielded new information, opening a new avenue for ion implantation research. The results show that the slope of the rapidly rising part of the reflectivity versus dose graph, and the amorphization dose are increasing functions of implantation energy. The total work up to the amorphization dose, and the work required for phase change, are calculated from the experimental data.

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In-situ measurement of crystalline-amorphous transition in si substrates during ion implantation

Abstract

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