InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

A. Bilenca; A. Alizon; V. Mikhelashvili; G. Eisenstein; R. Schwertberger; D. Gold; J. P. Reithmaier; A. Forchel

InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

A. Bilenca
, A. Alizon
, V. Mikhelashvili
, G. Eisenstein
, R. Schwertberger
, D. Gold
, J. P. Reithmaier
, A. Forchel

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The first InP based 1550 nm quantum dash semiconductor optical amplifier is reported. A 12 dB gain, a gain bandwidth wider than 150 nm and a symmetric four wave mixing response indicating a low α parameter are demonstrated. Quantum dash-based devices are expected to play a major role in future fibre optics systems and networks.

Original language	English
Pages (from-to)	170-171
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	1
State	Published - 9 Jan 2003
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "InAs/InP 1550 nm quantum dash semiconductor optical amplifiers",

abstract = "The first InP based 1550 nm quantum dash semiconductor optical amplifier is reported. A 12 dB gain, a gain bandwidth wider than 150 nm and a symmetric four wave mixing response indicating a low α parameter are demonstrated. Quantum dash-based devices are expected to play a major role in future fibre optics systems and networks.",

author = "A. Bilenca and A. Alizon and V. Mikhelashvili and G. Eisenstein and R. Schwertberger and D. Gold and Reithmaier, \{J. P.\} and A. Forchel",

year = "2003",

month = jan,

day = "9",

language = "English",

volume = "39",

pages = "170--171",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

AU - Bilenca, A.

AU - Alizon, A.

AU - Mikhelashvili, V.

AU - Eisenstein, G.

AU - Schwertberger, R.

AU - Gold, D.

AU - Reithmaier, J. P.

AU - Forchel, A.

PY - 2003/1/9

Y1 - 2003/1/9

N2 - The first InP based 1550 nm quantum dash semiconductor optical amplifier is reported. A 12 dB gain, a gain bandwidth wider than 150 nm and a symmetric four wave mixing response indicating a low α parameter are demonstrated. Quantum dash-based devices are expected to play a major role in future fibre optics systems and networks.

AB - The first InP based 1550 nm quantum dash semiconductor optical amplifier is reported. A 12 dB gain, a gain bandwidth wider than 150 nm and a symmetric four wave mixing response indicating a low α parameter are demonstrated. Quantum dash-based devices are expected to play a major role in future fibre optics systems and networks.

UR - https://www.scopus.com/pages/publications/0037426945

M3 - Article

AN - SCOPUS:0037426945

SN - 0013-5194

VL - 39

SP - 170

EP - 171

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

Abstract

ASJC Scopus subject areas

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