Abstract
Indirect many-photon transitions with the participation of lattice phonons are studied for Ge- or GaP-type crystals in external quantizing magnetic fields. The transition probability is calculated on the basis of the Weiler-Reine-Lax modification of Keldysh's method. The following two cases are discussed: E parallel H and E perpendicular to H (E is the electric field strength in the electromagnetic wave and H is the strength of the external magnetic field). Conditions are obtained under which the probability of an indirect l-photon transition is comparable with the probability of an (l plus r)-photon direct transition (where r is an integer).
| Original language | English |
|---|---|
| Pages (from-to) | 198-203 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 6 |
| Issue number | 2 |
| State | Published - 1 Aug 1972 |
ASJC Scopus subject areas
- General Engineering