Abstract
Attempt is made to develop a theory of indirect many-photon transitions in semiconductors having band (valence and conduction) extrema at the center of the Brillouin zone, i. e. , transitions near the direct absorption threshold. It is assumed that the energy of l laser guanta is insufficient to cause direct transitions and the required additional energy is supplied by phonons, and, that the detinning does not exceed the energy of the limiting Debye photon. The calculation is based on a modified Keldysh method.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Semiconductors |
| Volume | 6 |
| Issue number | 1 |
| State | Published - 1 Jul 1972 |
ASJC Scopus subject areas
- General Engineering