INDIRECT MANY-PHOTON TRANSITIONS IN SEMICONDUCTORS WITH BAND EXTREMA AT THE CENTER OF THE BRILLOUIN ZONE.

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Abstract

Attempt is made to develop a theory of indirect many-photon transitions in semiconductors having band (valence and conduction) extrema at the center of the Brillouin zone, i. e. , transitions near the direct absorption threshold. It is assumed that the energy of l laser guanta is insufficient to cause direct transitions and the required additional energy is supplied by phonons, and, that the detinning does not exceed the energy of the limiting Debye photon. The calculation is based on a modified Keldysh method.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalSemiconductors
Volume6
Issue number1
StatePublished - 1 Jul 1972

ASJC Scopus subject areas

  • Engineering (all)

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