Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim; Michael Shandalov; Krishna C. Saraswat; Paul C. McIntyre

doi:10.1063/1.3527977

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat, Paul C. McIntyre

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Abstract

Changes in phonon spectra and point defect populations that accompany crystallization of HfO₂ were investigated by inelastic tunneling across Al/ HfO₂ / SiO₂ /Si. Spectral features from tetragonal- and monoclinic- HfO₂ vibrational modes are observed in annealed films, while they are not detected in as-deposited samples, consistent with selected area electron diffraction analysis. In addition to features indexed as vibrational modes, peaks whose amplitude and energy vary with bias history were detected for p-type Si. We attribute these features to point defect-related states in the HfO₂ band gap and find good agreement between their energies and those predicted theoretically for oxygen vacancy levels in HfO₂.

Original language	English
Article number	032108
Journal	Applied Physics Letters
Volume	98
Issue number	3
DOIs	https://doi.org/10.1063/1.3527977
State	Published - 17 Jan 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{2b0f2e831e6c42bc84e88ed46e856284,

title = "Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics",

abstract = "Changes in phonon spectra and point defect populations that accompany crystallization of HfO2 were investigated by inelastic tunneling across Al/ HfO2 / SiO2 /Si. Spectral features from tetragonal- and monoclinic- HfO2 vibrational modes are observed in annealed films, while they are not detected in as-deposited samples, consistent with selected area electron diffraction analysis. In addition to features indexed as vibrational modes, peaks whose amplitude and energy vary with bias history were detected for p-type Si. We attribute these features to point defect-related states in the HfO2 band gap and find good agreement between their energies and those predicted theoretically for oxygen vacancy levels in HfO2.",

author = "Kim, {Eun Ji} and Michael Shandalov and Saraswat, {Krishna C.} and McIntyre, {Paul C.}",

year = "2011",

month = jan,

day = "17",

doi = "10.1063/1.3527977",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

AU - Kim, Eun Ji

AU - Shandalov, Michael

AU - Saraswat, Krishna C.

AU - McIntyre, Paul C.

PY - 2011/1/17

Y1 - 2011/1/17

N2 - Changes in phonon spectra and point defect populations that accompany crystallization of HfO2 were investigated by inelastic tunneling across Al/ HfO2 / SiO2 /Si. Spectral features from tetragonal- and monoclinic- HfO2 vibrational modes are observed in annealed films, while they are not detected in as-deposited samples, consistent with selected area electron diffraction analysis. In addition to features indexed as vibrational modes, peaks whose amplitude and energy vary with bias history were detected for p-type Si. We attribute these features to point defect-related states in the HfO2 band gap and find good agreement between their energies and those predicted theoretically for oxygen vacancy levels in HfO2.

AB - Changes in phonon spectra and point defect populations that accompany crystallization of HfO2 were investigated by inelastic tunneling across Al/ HfO2 / SiO2 /Si. Spectral features from tetragonal- and monoclinic- HfO2 vibrational modes are observed in annealed films, while they are not detected in as-deposited samples, consistent with selected area electron diffraction analysis. In addition to features indexed as vibrational modes, peaks whose amplitude and energy vary with bias history were detected for p-type Si. We attribute these features to point defect-related states in the HfO2 band gap and find good agreement between their energies and those predicted theoretically for oxygen vacancy levels in HfO2.

UR - http://www.scopus.com/inward/record.url?scp=79251551999&partnerID=8YFLogxK

U2 - 10.1063/1.3527977

DO - 10.1063/1.3527977

M3 - Article

AN - SCOPUS:79251551999

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032108

ER -

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Abstract

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