Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon

R. Swanepoel; P. L. Swart; Herzl Aharoni

doi:10.1016/0040-6090(85)90071-9

Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon

R. Swanepoel, P. L. Swart, Herzl Aharoni

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Thin films of amorphous silicon were prepared by r.f. sputtering under constant hydrogen partial pressure and various argon partial pressures. The dark conductivity and photoconductivity were measured as functions of temperature. The optical transmission was also measured. The results show an increase in dark conductivity, increase in refractive index, decrease in activation energy, decrease in photoconductivity and decrease in optical gap with decrease in argon partial pressure. All these phenomena are explained in terms of a tendency towards microcrystalline structure with decrease in argon partial pressure.

Original language	English
Pages (from-to)	191-203
Number of pages	13
Journal	Thin Solid Films
Volume	128
Issue number	3-4
DOIs	https://doi.org/10.1016/0040-6090(85)90071-9
State	Published - 28 Jun 1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(85)90071-9

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@article{ec4e8d3872dd41628e73fe295c4fed94,

title = "Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon",

abstract = "Thin films of amorphous silicon were prepared by r.f. sputtering under constant hydrogen partial pressure and various argon partial pressures. The dark conductivity and photoconductivity were measured as functions of temperature. The optical transmission was also measured. The results show an increase in dark conductivity, increase in refractive index, decrease in activation energy, decrease in photoconductivity and decrease in optical gap with decrease in argon partial pressure. All these phenomena are explained in terms of a tendency towards microcrystalline structure with decrease in argon partial pressure.",

author = "R. Swanepoel and Swart, {P. L.} and Herzl Aharoni",

note = "Funding Information: This work was supported by the Research Grants Division of the South African Council for Scientific and Industrial Research, the Cooperative Scientific Programmes of the same organization and the Research Committee of the Rand Afrikaans University. The authors also wish to thank B. M. Lacquet for her contribution in preparing the samples.",

year = "1985",

month = jun,

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doi = "10.1016/0040-6090(85)90071-9",

language = "English",

volume = "128",

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journal = "Thin Solid Films",

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T1 - Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon

AU - Swanepoel, R.

AU - Swart, P. L.

AU - Aharoni, Herzl

N1 - Funding Information: This work was supported by the Research Grants Division of the South African Council for Scientific and Industrial Research, the Cooperative Scientific Programmes of the same organization and the Research Committee of the Rand Afrikaans University. The authors also wish to thank B. M. Lacquet for her contribution in preparing the samples.

PY - 1985/6/28

Y1 - 1985/6/28

N2 - Thin films of amorphous silicon were prepared by r.f. sputtering under constant hydrogen partial pressure and various argon partial pressures. The dark conductivity and photoconductivity were measured as functions of temperature. The optical transmission was also measured. The results show an increase in dark conductivity, increase in refractive index, decrease in activation energy, decrease in photoconductivity and decrease in optical gap with decrease in argon partial pressure. All these phenomena are explained in terms of a tendency towards microcrystalline structure with decrease in argon partial pressure.

AB - Thin films of amorphous silicon were prepared by r.f. sputtering under constant hydrogen partial pressure and various argon partial pressures. The dark conductivity and photoconductivity were measured as functions of temperature. The optical transmission was also measured. The results show an increase in dark conductivity, increase in refractive index, decrease in activation energy, decrease in photoconductivity and decrease in optical gap with decrease in argon partial pressure. All these phenomena are explained in terms of a tendency towards microcrystalline structure with decrease in argon partial pressure.

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U2 - 10.1016/0040-6090(85)90071-9

DO - 10.1016/0040-6090(85)90071-9

M3 - Article

AN - SCOPUS:0022084073

SN - 0040-6090

VL - 128

SP - 191

EP - 203

JO - Thin Solid Films

JF - Thin Solid Films

IS - 3-4

ER -

Influence of argon partial pressure on the electrical and optical properties of sputtered hydrogenated amorphous silicon

Abstract

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