Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

Neetika; Sandeep Kumar; Amit Sanger; Hemant K. Chourasiya; Ashish Kumar; K. Asokan; Ramesh Chandra; V. K. Malik

doi:10.1016/j.jallcom.2019.05.028

Influence of barrier inhomogeneities on transport properties of Pt/MoS₂ Schottky barrier junction

Neetika, Sandeep Kumar, Amit Sanger, Hemant K. Chourasiya, Ashish Kumar, K. Asokan, Ramesh Chandra, V. K. Malik

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The electrical transport properties of the Pt/MoS₂ Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm)of MoS₂ exhibits rectifying behavior and changes into Ohmic nature on increasing the thickness of MoS₂. The current-voltage (I–V)measurements on the Schottky barrier junction were performed in the temperature range of 200–350 K. Our detailed analysis of the temperature dependent I–V data shows the presence of a bi-fold charge transport mechanism across the Pt/MoS₂ interface. Dipolar fields, present due to inhomogeneities at the interface, modify charge transport in addition to the thermionic emission mechanism attributed conventionally for the Schottky junctions. The model, assuming a Gaussian distribution of barrier heights due to the presence of lateral inhomogeneities, has been used to analyze and explain the temperature dependent I–V data. The effect of lateral inhomogeneities on the electrical properties of the Pt/MoS₂ Schottky junction has been studied in a quantitative manner.

Original language	English
Pages (from-to)	582-588
Number of pages	7
Journal	Journal of Alloys and Compounds
Volume	797
DOIs	https://doi.org/10.1016/j.jallcom.2019.05.028
State	Published - 15 Aug 2019
Externally published	Yes

Keywords

Interface inhomogeneities
Pt/MoS Schottky junction
Schottky barrier height

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2019.05.028

Cite this

@article{c74960e702a54d16902beb52868966c2,

title = "Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction",

abstract = "The electrical transport properties of the Pt/MoS2 Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm)of MoS2 exhibits rectifying behavior and changes into Ohmic nature on increasing the thickness of MoS2. The current-voltage (I–V)measurements on the Schottky barrier junction were performed in the temperature range of 200–350 K. Our detailed analysis of the temperature dependent I–V data shows the presence of a bi-fold charge transport mechanism across the Pt/MoS2 interface. Dipolar fields, present due to inhomogeneities at the interface, modify charge transport in addition to the thermionic emission mechanism attributed conventionally for the Schottky junctions. The model, assuming a Gaussian distribution of barrier heights due to the presence of lateral inhomogeneities, has been used to analyze and explain the temperature dependent I–V data. The effect of lateral inhomogeneities on the electrical properties of the Pt/MoS2 Schottky junction has been studied in a quantitative manner.",

keywords = "Interface inhomogeneities, Pt/MoS Schottky junction, Schottky barrier height",

author = "Neetika and Sandeep Kumar and Amit Sanger and Chourasiya, {Hemant K.} and Ashish Kumar and K. Asokan and Ramesh Chandra and Malik, {V. K.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

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day = "15",

doi = "10.1016/j.jallcom.2019.05.028",

language = "English",

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T1 - Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

AU - Neetika,

AU - Kumar, Sandeep

AU - Sanger, Amit

AU - Chourasiya, Hemant K.

AU - Kumar, Ashish

AU - Asokan, K.

AU - Chandra, Ramesh

AU - Malik, V. K.

PY - 2019/8/15

Y1 - 2019/8/15

N2 - The electrical transport properties of the Pt/MoS2 Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm)of MoS2 exhibits rectifying behavior and changes into Ohmic nature on increasing the thickness of MoS2. The current-voltage (I–V)measurements on the Schottky barrier junction were performed in the temperature range of 200–350 K. Our detailed analysis of the temperature dependent I–V data shows the presence of a bi-fold charge transport mechanism across the Pt/MoS2 interface. Dipolar fields, present due to inhomogeneities at the interface, modify charge transport in addition to the thermionic emission mechanism attributed conventionally for the Schottky junctions. The model, assuming a Gaussian distribution of barrier heights due to the presence of lateral inhomogeneities, has been used to analyze and explain the temperature dependent I–V data. The effect of lateral inhomogeneities on the electrical properties of the Pt/MoS2 Schottky junction has been studied in a quantitative manner.

AB - The electrical transport properties of the Pt/MoS2 Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm)of MoS2 exhibits rectifying behavior and changes into Ohmic nature on increasing the thickness of MoS2. The current-voltage (I–V)measurements on the Schottky barrier junction were performed in the temperature range of 200–350 K. Our detailed analysis of the temperature dependent I–V data shows the presence of a bi-fold charge transport mechanism across the Pt/MoS2 interface. Dipolar fields, present due to inhomogeneities at the interface, modify charge transport in addition to the thermionic emission mechanism attributed conventionally for the Schottky junctions. The model, assuming a Gaussian distribution of barrier heights due to the presence of lateral inhomogeneities, has been used to analyze and explain the temperature dependent I–V data. The effect of lateral inhomogeneities on the electrical properties of the Pt/MoS2 Schottky junction has been studied in a quantitative manner.

KW - Interface inhomogeneities

KW - Pt/MoS Schottky junction

KW - Schottky barrier height

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