Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

Neetika, Sandeep Kumar, Amit Sanger, Hemant K. Chourasiya, Ashish Kumar, K. Asokan, Ramesh Chandra, V. K. Malik

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The electrical transport properties of the Pt/MoS2 Schottky barrier junction have been investigated to explore the effect of lateral barrier inhomogeneities at the interface. The junction with a relatively thin layer (5 nm)of MoS2 exhibits rectifying behavior and changes into Ohmic nature on increasing the thickness of MoS2. The current-voltage (I–V)measurements on the Schottky barrier junction were performed in the temperature range of 200–350 K. Our detailed analysis of the temperature dependent I–V data shows the presence of a bi-fold charge transport mechanism across the Pt/MoS2 interface. Dipolar fields, present due to inhomogeneities at the interface, modify charge transport in addition to the thermionic emission mechanism attributed conventionally for the Schottky junctions. The model, assuming a Gaussian distribution of barrier heights due to the presence of lateral inhomogeneities, has been used to analyze and explain the temperature dependent I–V data. The effect of lateral inhomogeneities on the electrical properties of the Pt/MoS2 Schottky junction has been studied in a quantitative manner.

Original languageEnglish
Pages (from-to)582-588
Number of pages7
JournalJournal of Alloys and Compounds
StatePublished - 15 Aug 2019
Externally publishedYes


  • Interface inhomogeneities
  • Pt/MoS Schottky junction
  • Schottky barrier height

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry


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