Influence of electron injection on the photoresponse of ZnO homojunction diodes

O. Lopatiuk-Tirpak, L. Chernyak, L. J. Mandalapu, Z. Yang, J. L. Liu, Konstantin Gartsman, Yishay Feldman, Zinovy Dashevsky

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25 C of charge yielded a nearly 2.5-fold increase of photocurrent at 350 nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p -type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.

Original languageEnglish
Article number142114
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
StatePublished - 12 Oct 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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