Influence of electron injection on the photoresponse of ZnO homojunction diodes

O. Lopatiuk-Tirpak; L. Chernyak; L. J. Mandalapu; Z. Yang; J. L. Liu; Konstantin Gartsman; Yishay Feldman; Zinovy Dashevsky

doi:10.1063/1.2360233

Influence of electron injection on the photoresponse of ZnO homojunction diodes

O. Lopatiuk-Tirpak, L. Chernyak, L. J. Mandalapu, Z. Yang, J. L. Liu, Konstantin Gartsman, Yishay Feldman, Zinovy Dashevsky

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25 C of charge yielded a nearly 2.5-fold increase of photocurrent at 350 nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p -type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.

Original language	English
Article number	142114
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2360233
State	Published - 12 Oct 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2360233

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title = "Influence of electron injection on the photoresponse of ZnO homojunction diodes",

abstract = "Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25 C of charge yielded a nearly 2.5-fold increase of photocurrent at 350 nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p -type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.",

author = "O. Lopatiuk-Tirpak and L. Chernyak and Mandalapu, {L. J.} and Z. Yang and Liu, {J. L.} and Konstantin Gartsman and Yishay Feldman and Zinovy Dashevsky",

note = "Funding Information: The work at the University of Central Florida was supported in part by the National Science Foundation (ECS 0422604), the American Chemical Society Petroleum Research Fund (40501-AC10), and NATO (PST.MD.CLG 980579). The work at the UC Riverside was supported in part by the DARPA/DMEA (Award No. H94003-04-2-0404), the DOD/DMEA (Award No. H94003-05-2-0505), and the UCEI grant.",

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AU - Lopatiuk-Tirpak, O.

AU - Chernyak, L.

AU - Mandalapu, L. J.

AU - Yang, Z.

AU - Liu, J. L.

AU - Gartsman, Konstantin

AU - Feldman, Yishay

AU - Dashevsky, Zinovy

N1 - Funding Information: The work at the University of Central Florida was supported in part by the National Science Foundation (ECS 0422604), the American Chemical Society Petroleum Research Fund (40501-AC10), and NATO (PST.MD.CLG 980579). The work at the UC Riverside was supported in part by the DARPA/DMEA (Award No. H94003-04-2-0404), the DOD/DMEA (Award No. H94003-05-2-0505), and the UCEI grant.

PY - 2006/10/12

Y1 - 2006/10/12

N2 - Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25 C of charge yielded a nearly 2.5-fold increase of photocurrent at 350 nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p -type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.

AB - Forward bias electron injection into the p side of a p-n homojunction was shown to result in an improved response of the ZnO photodiodes. Injection of about 25 C of charge yielded a nearly 2.5-fold increase of photocurrent at 350 nm. This improvement was correlated with the increase of the diffusion length of minority electrons in p -type ZnO:Sb as determined by electron beam induced current measurements. It is suggested that the increase of the diffusion length is related to the carrier trapping on nonionized acceptor levels.

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Influence of electron injection on the photoresponse of ZnO homojunction diodes

Abstract

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