Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs

D. H. Rich; K. Rammohan; Y. Tang; H. T. Lin; R. S. Goldman; H. H. Wieder; K. L. Kavanagh

doi:10.1116/1.587810

Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of In_xGa_1-xAs/GaAs

D. H. Rich, K. Rammohan, Y. Tang, H. T. Lin, R. S. Goldman, H. H. Wieder, K. L. Kavanagh

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6 Scopus citations

Abstract

Local variations in the optical properties of thick In_0.13Ga_0.87As films grown on GaAs(001) substrates misoriented toward {111} planes have been studied with polarized and spectrally-resolved cathodoluminescence (CL) imaging. The degree of anisotropic relaxation and density of dark line defects (DLDs) in CL was found to depend on the choice of the substrate miscut orientation. An enhanced anisotropy in DLD density and strain relaxation was found for a misorientation towards (111)A relative to that for a misorientation towards (111)B. Local variations and spatial correlations in polarization anisotropy, band-gap energy shifts, luminescence efficiency, and defect-induced long-wavelength luminescence were examined.

Original language	English
Pages (from-to)	1766-1772
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	4
DOIs	https://doi.org/10.1116/1.587810
State	Published - 1 Jul 1995
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs",

abstract = "Local variations in the optical properties of thick In0.13Ga0.87As films grown on GaAs(001) substrates misoriented toward {111} planes have been studied with polarized and spectrally-resolved cathodoluminescence (CL) imaging. The degree of anisotropic relaxation and density of dark line defects (DLDs) in CL was found to depend on the choice of the substrate miscut orientation. An enhanced anisotropy in DLD density and strain relaxation was found for a misorientation towards (111)A relative to that for a misorientation towards (111)B. Local variations and spatial correlations in polarization anisotropy, band-gap energy shifts, luminescence efficiency, and defect-induced long-wavelength luminescence were examined.",

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T1 - Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs

AU - Rich, D. H.

AU - Rammohan, K.

AU - Tang, Y.

AU - Lin, H. T.

AU - Goldman, R. S.

AU - Wieder, H. H.

AU - Kavanagh, K. L.

PY - 1995/7/1

Y1 - 1995/7/1

N2 - Local variations in the optical properties of thick In0.13Ga0.87As films grown on GaAs(001) substrates misoriented toward {111} planes have been studied with polarized and spectrally-resolved cathodoluminescence (CL) imaging. The degree of anisotropic relaxation and density of dark line defects (DLDs) in CL was found to depend on the choice of the substrate miscut orientation. An enhanced anisotropy in DLD density and strain relaxation was found for a misorientation towards (111)A relative to that for a misorientation towards (111)B. Local variations and spatial correlations in polarization anisotropy, band-gap energy shifts, luminescence efficiency, and defect-induced long-wavelength luminescence were examined.

AB - Local variations in the optical properties of thick In0.13Ga0.87As films grown on GaAs(001) substrates misoriented toward {111} planes have been studied with polarized and spectrally-resolved cathodoluminescence (CL) imaging. The degree of anisotropic relaxation and density of dark line defects (DLDs) in CL was found to depend on the choice of the substrate miscut orientation. An enhanced anisotropy in DLD density and strain relaxation was found for a misorientation towards (111)A relative to that for a misorientation towards (111)B. Local variations and spatial correlations in polarization anisotropy, band-gap energy shifts, luminescence efficiency, and defect-induced long-wavelength luminescence were examined.

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Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of In_xGa_1-xAs/GaAs

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