Influence of Gate Voltage on the diffusion of Oxygen on Graphene

Alejandro Suarez, Ljubisa Radovic, Ezra Bar-Ziv, Jorge Sofo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We calculate the surface diffusion of Oxygen on Graphene using Density Functional Theory. We find the activation energy for diffusion to be 0.71 eV. Charging the graphene plane causes the diffusion barrier to change substantially. Electron doping graphene lowers the diffusion barrier, resulting in activation energies as low as 0.15 eV for a carrier concentration of 7.6 x 1013 cm-2 . This barrier reduction yields diffusion coefficients reaching over nine orders of magnitude lower than that of diffusion on neutral graphene. After study of the change in charge density distribution and local density of states, this effect is explained by a mixture of bond weakening under the equilibrium state and bond strengthening during the transition state. With this large fluctuation in diffusivity, patterning of oxidized regions in graphene may be achieved through variation of the gate voltage.
Original languageEnglish
Title of host publication APS March Meeting 2011, March 21-25, 2011
StatePublished - 1 Mar 2011


Dive into the research topics of 'Influence of Gate Voltage on the diffusion of Oxygen on Graphene'. Together they form a unique fingerprint.

Cite this