Influence of misfit dislocations on thermal quenching of luminescence in InxGa1-xAs/GaAs multiple quantum wells

K. Rammohan; H. T. Lin; D. H. Rich; A. Larsson

doi:10.1063/1.360491

Influence of misfit dislocations on thermal quenching of luminescence in In_xGa_1-xAs/GaAs multiple quantum wells

K. Rammohan, H. T. Lin, D. H. Rich, A. Larsson

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Abstract

The temperature dependence of the cathodoluminescence (CL) originating from In_0.21Ga_0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The influence of misfit dislocations and point defects associated with strain relaxation on the thermal quenching of luminescence has been investigated, and the spatial variation in the activation energies has been examined. The CL intensity dependence on temperature for T≲150 K is controlled by thermally activated nonradiative recombination. For T≳150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

Original language	English
Pages (from-to)	6687-6690
Number of pages	4
Journal	Journal of Applied Physics
Volume	78
Issue number	11
DOIs	https://doi.org/10.1063/1.360491
State	Published - 1 Dec 1995
Externally published	Yes

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Physics and Astronomy (all)

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title = "Influence of misfit dislocations on thermal quenching of luminescence in InxGa1-xAs/GaAs multiple quantum wells",

abstract = "The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The influence of misfit dislocations and point defects associated with strain relaxation on the thermal quenching of luminescence has been investigated, and the spatial variation in the activation energies has been examined. The CL intensity dependence on temperature for T≲150 K is controlled by thermally activated nonradiative recombination. For T≳150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.",

author = "K. Rammohan and Lin, {H. T.} and Rich, {D. H.} and A. Larsson",

year = "1995",

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doi = "10.1063/1.360491",

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journal = "Journal of Applied Physics",

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T1 - Influence of misfit dislocations on thermal quenching of luminescence in InxGa1-xAs/GaAs multiple quantum wells

AU - Rammohan, K.

AU - Lin, H. T.

AU - Rich, D. H.

AU - Larsson, A.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The influence of misfit dislocations and point defects associated with strain relaxation on the thermal quenching of luminescence has been investigated, and the spatial variation in the activation energies has been examined. The CL intensity dependence on temperature for T≲150 K is controlled by thermally activated nonradiative recombination. For T≳150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

AB - The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The influence of misfit dislocations and point defects associated with strain relaxation on the thermal quenching of luminescence has been investigated, and the spatial variation in the activation energies has been examined. The CL intensity dependence on temperature for T≲150 K is controlled by thermally activated nonradiative recombination. For T≳150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

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U2 - 10.1063/1.360491

DO - 10.1063/1.360491

M3 - Article

AN - SCOPUS:0029545064

SN - 0021-8979

VL - 78

SP - 6687

EP - 6690

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Influence of misfit dislocations on thermal quenching of luminescence in In_xGa_1-xAs/GaAs multiple quantum wells

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