Influence of nitrogen on coherent longitudinal optical phonons in GaAs1−xNx

  • Hideo Takeuchi
  • , Kai Matsunaga
  • , Yusuke Sengi
  • , Jared W. Mitchell
  • , Yury Turkulets
  • , Rachel S. Goldman

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the influence of nitrogen (N) on coherent longitudinal optical (LO) phonons in dilute nitride semiconductor alloys. Terahertz time-domain spectroscopy reveals a reduced frequency (redshift) of LO phonons and enhanced decay times for coherent GaAs-like LO phonons emitted from GaAs1−x Nx in comparison to those from semi-insulating GaAs. We attribute the redshift of the phonon frequency to both N-alloying-induced compression of the As-sublattice and tensile coherency strain at the GaAs1−x Nx/GaAs interface. In addition, an N-induced enhancement of the coherent phonon decay time is attributed to reduced LO phonon scattering associated with the enhanced electron effective masses that reduce the transient electron velocity.

Original languageEnglish
Article number233105
JournalJournal of Applied Physics
Volume138
Issue number23
DOIs
StatePublished - 21 Dec 2025
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • General Physics and Astronomy

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