Abstract
We investigated the influence of nitrogen (N) on coherent longitudinal optical (LO) phonons in dilute nitride semiconductor alloys. Terahertz time-domain spectroscopy reveals a reduced frequency (redshift) of LO phonons and enhanced decay times for coherent GaAs-like LO phonons emitted from GaAs1−x Nx in comparison to those from semi-insulating GaAs. We attribute the redshift of the phonon frequency to both N-alloying-induced compression of the As-sublattice and tensile coherency strain at the GaAs1−x Nx/GaAs interface. In addition, an N-induced enhancement of the coherent phonon decay time is attributed to reduced LO phonon scattering associated with the enhanced electron effective masses that reduce the transient electron velocity.
| Original language | English |
|---|---|
| Article number | 233105 |
| Journal | Journal of Applied Physics |
| Volume | 138 |
| Issue number | 23 |
| DOIs | |
| State | Published - 21 Dec 2025 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- General Physics and Astronomy
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