Influence of substrate miscut on the island formation process in In0.2Ga0.8As/GaAs multilayers

E. Gartstein; D. Mogilyanski; D. Barlam

doi:10.1142/s0218625x03005049

Influence of substrate miscut on the island formation process in In_0.2Ga_0.8As/GaAs multilayers

E. Gartstein
, D. Mogilyanski
, D. Barlam

Research output: Contribution to journal › Article › peer-review

Abstract

LPOMVPE-grown In_0.2Ga_0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

Original language	English
Pages (from-to)	263-270
Number of pages	8
Journal	Surface Review and Letters
Volume	10
Issue number	2-3
DOIs	https://doi.org/10.1142/s0218625x03005049
State	Published - 1 Jan 2003

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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abstract = "LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.",

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AU - Barlam, D.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

AB - LPOMVPE-grown In0.2Ga0.8As/GaAs multilayers on GaAs substrates with miscut values of 0°, 0.3° and 2° around the [100] azimuthal direction were investigated by employing X-ray diffraction techniques complemented by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The step-terrace structure evolving on the interfaces upon deposition strongly depends on the initial substrate morphology. The initiation of island nucleation, and both lateral and vertical ordering are related to the interfacial morphological parameters. Finite element analysis (FEA) is performed to elucidate the interplay between structural and strain relaxation processes.

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JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 2-3

ER -

Influence of substrate miscut on the island formation process in In_0.2Ga_0.8As/GaAs multilayers

Abstract

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