Influence of the electron damping on the properties of intermediate valence systems

A. F. Barabanov; K. A. Kikoin; L. A. Maksimov

doi:10.1016/0038-1098(76)91689-6

Influence of the electron damping on the properties of intermediate valence systems

A. F. Barabanov
, K. A. Kikoin
, L. A. Maksimov

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The influence of conduction electron damping on the possibility of excitonic coupling in the intermediate valence systems is considered. The scattering by the internal degrees of freedom of f{combining short stroke overlay}-shells is shown to be the main mechanism for this damping. It is shown that both the excitonic energy gap and the damping are proportional to s-f{combining short stroke overlay} Coulomb integral, so the scattering considered prevents s- and f{combining short stroke overlay}-electrons from anomalous coupling. The growth of the resistivity near the point of valence change can be understood as the manifestation of this scattering.

Original language	English
Pages (from-to)	21-22
Number of pages	2
Journal	Solid State Communications
Volume	20
Issue number	1
DOIs	https://doi.org/10.1016/0038-1098(76)91689-6
State	Published - 1 Jan 1976
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/0038-1098(76)91689-6

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title = "Influence of the electron damping on the properties of intermediate valence systems",

abstract = "The influence of conduction electron damping on the possibility of excitonic coupling in the intermediate valence systems is considered. The scattering by the internal degrees of freedom of f\{combining short stroke overlay\}-shells is shown to be the main mechanism for this damping. It is shown that both the excitonic energy gap and the damping are proportional to s-f\{combining short stroke overlay\} Coulomb integral, so the scattering considered prevents s- and f\{combining short stroke overlay\}-electrons from anomalous coupling. The growth of the resistivity near the point of valence change can be understood as the manifestation of this scattering.",

author = "Barabanov, \{A. F.\} and Kikoin, \{K. A.\} and Maksimov, \{L. A.\}",

year = "1976",

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doi = "10.1016/0038-1098(76)91689-6",

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T1 - Influence of the electron damping on the properties of intermediate valence systems

AU - Barabanov, A. F.

AU - Kikoin, K. A.

AU - Maksimov, L. A.

PY - 1976/1/1

Y1 - 1976/1/1

N2 - The influence of conduction electron damping on the possibility of excitonic coupling in the intermediate valence systems is considered. The scattering by the internal degrees of freedom of f{combining short stroke overlay}-shells is shown to be the main mechanism for this damping. It is shown that both the excitonic energy gap and the damping are proportional to s-f{combining short stroke overlay} Coulomb integral, so the scattering considered prevents s- and f{combining short stroke overlay}-electrons from anomalous coupling. The growth of the resistivity near the point of valence change can be understood as the manifestation of this scattering.

AB - The influence of conduction electron damping on the possibility of excitonic coupling in the intermediate valence systems is considered. The scattering by the internal degrees of freedom of f{combining short stroke overlay}-shells is shown to be the main mechanism for this damping. It is shown that both the excitonic energy gap and the damping are proportional to s-f{combining short stroke overlay} Coulomb integral, so the scattering considered prevents s- and f{combining short stroke overlay}-electrons from anomalous coupling. The growth of the resistivity near the point of valence change can be understood as the manifestation of this scattering.

UR - https://www.scopus.com/pages/publications/49549133223

U2 - 10.1016/0038-1098(76)91689-6

DO - 10.1016/0038-1098(76)91689-6

M3 - Article

AN - SCOPUS:49549133223

SN - 0038-1098

VL - 20

SP - 21

EP - 22

JO - Solid State Communications

JF - Solid State Communications

IS - 1

ER -

Influence of the electron damping on the properties of intermediate valence systems

Abstract

ASJC Scopus subject areas

UN SDGs

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