Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

M. V. Khenkin; A. V. Emelyanov; A. G. Kazanskii; P. A. Forsh; P. K. Kashkarov; E. I. Terukov; D. L. Orekhov; P. Roca i Cabarrocas

doi:10.1134/S1063782613090108

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

M. V. Khenkin, A. V. Emelyanov, A. G. Kazanskii, P. A. Forsh, P. K. Kashkarov, E. I. Terukov, D. L. Orekhov, P. Roca i Cabarrocas

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

Original language	English
Pages (from-to)	1271-1274
Number of pages	4
Journal	Semiconductors
Volume	47
Issue number	9
DOIs	https://doi.org/10.1134/S1063782613090108
State	Published - 1 Sep 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1134/S1063782613090108

Cite this

@article{95df4964aff142d2847e88d4f38cae4d,

title = "Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties",

abstract = "The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.",

author = "Khenkin, {M. V.} and Emelyanov, {A. V.} and Kazanskii, {A. G.} and Forsh, {P. A.} and Kashkarov, {P. K.} and Terukov, {E. I.} and Orekhov, {D. L.} and {Roca i Cabarrocas}, P.",

note = "Funding Information: The study was carried out with equipment of the Multiple Access Center, Moscow State University, and supported in part by the Russian Foundation for Basic Research, project no. 12 02 00751 a, and the Ministry of Education and Science of the Russian Federation, state contract no. 16.552.11.7081.",

year = "2013",

month = sep,

day = "1",

doi = "10.1134/S1063782613090108",

language = "English",

volume = "47",

pages = "1271--1274",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "9",

}

TY - JOUR

T1 - Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

AU - Khenkin, M. V.

AU - Emelyanov, A. V.

AU - Kazanskii, A. G.

AU - Forsh, P. A.

AU - Kashkarov, P. K.

AU - Terukov, E. I.

AU - Orekhov, D. L.

AU - Roca i Cabarrocas, P.

N1 - Funding Information: The study was carried out with equipment of the Multiple Access Center, Moscow State University, and supported in part by the Russian Foundation for Basic Research, project no. 12 02 00751 a, and the Ministry of Education and Science of the Russian Federation, state contract no. 16.552.11.7081.

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

AB - The structural, optical, and photoelectric properties of polymorphous silicon films produced by plasma-enhanced chemical vapor deposition from a mixture of monosilane and hydrogen at high pressure are studied. Variations in the pressure of the gas mixture used for film production barely change the Raman spectra of the films, but induce changes in the photoconductivity and in the absorption spectrum obtained by the constant-photocurrent technique. The experimentally observed change in the optical and photoelectric parameters of the films is attributed to some structural changes induced in the films by variations in the deposition parameters.

UR - http://www.scopus.com/inward/record.url?scp=84883647671&partnerID=8YFLogxK

U2 - 10.1134/S1063782613090108

DO - 10.1134/S1063782613090108

M3 - Article

AN - SCOPUS:84883647671

SN - 1063-7826

VL - 47

SP - 1271

EP - 1274

JO - Semiconductors

JF - Semiconductors

IS - 9

ER -

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this