Infrared detectors based on semiconductor p-n junction of PbSe

Vladimir Kasiyan; Zinovi Dashevsky; Casey Minna Schwarz; M. Shatkhin; Elena Flitsiyan; Leonid Chernyak; Dmitry Khokhlov

doi:10.1063/1.4759011

Infrared detectors based on semiconductor p-n junction of PbSe

Vladimir Kasiyan, Zinovi Dashevsky, Casey Minna Schwarz, M. Shatkhin, Elena Flitsiyan, Leonid Chernyak, Dmitry Khokhlov

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.

Original language	English
Article number	086101
Journal	Journal of Applied Physics
Volume	112
Issue number	8
DOIs	https://doi.org/10.1063/1.4759011
State	Published - 15 Oct 2012

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4759011

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title = "Infrared detectors based on semiconductor p-n junction of PbSe",

abstract = "P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.",

author = "Vladimir Kasiyan and Zinovi Dashevsky and {Minna Schwarz}, Casey and M. Shatkhin and Elena Flitsiyan and Leonid Chernyak and Dmitry Khokhlov",

note = "Funding Information: This research was supported in part by NATO under the Collaborative Linkage Grant # 984277.",

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T1 - Infrared detectors based on semiconductor p-n junction of PbSe

AU - Kasiyan, Vladimir

AU - Dashevsky, Zinovi

AU - Minna Schwarz, Casey

AU - Shatkhin, M.

AU - Flitsiyan, Elena

AU - Chernyak, Leonid

AU - Khokhlov, Dmitry

N1 - Funding Information: This research was supported in part by NATO under the Collaborative Linkage Grant # 984277.

PY - 2012/10/15

Y1 - 2012/10/15

N2 - P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.

AB - P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.

UR - http://www.scopus.com/inward/record.url?scp=84868346166&partnerID=8YFLogxK

U2 - 10.1063/1.4759011

DO - 10.1063/1.4759011

M3 - Article

AN - SCOPUS:84868346166

SN - 0021-8979

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 086101

ER -

Infrared detectors based on semiconductor p-n junction of PbSe

Abstract

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