Infrared detectors based on semiconductor p-n junction of PbSe

Vladimir Kasiyan, Zinovi Dashevsky, Casey Minna Schwarz, M. Shatkhin, Elena Flitsiyan, Leonid Chernyak, Dmitry Khokhlov

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.

Original languageEnglish
Article number086101
JournalJournal of Applied Physics
Issue number8
StatePublished - 15 Oct 2012

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Infrared detectors based on semiconductor p-n junction of PbSe'. Together they form a unique fingerprint.

Cite this