Abstract
A maximum sag limited to 1.3 μm is achieved when using chalcogenide glassy (ChG) films of the As-S or As-Se systems for fabrication of IR microlens arrays applying the modified proximity method, the gray scale, or continuous tone photolithography with classical UV exposure sources. Using the thermal reflow method one can extend this range. For realization of this method, a new photoresist material based on a modification of the ChG film structure by the introduction of iodine atoms was developed. An AsSeI0.1 composition was selected as the optimum material giving a significant decrease in melting temperature, without appreciable loss of photosensitive properties. AFM measurements of AsSeI0.1 microlenses produced by the thermal reflow method were performed during the reflow process. The gain in the maximum sag of the microlens compared with the modified proximity method and gray scale or continuous tone lithography is about two times.
Original language | English |
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Pages (from-to) | 147-152 |
Number of pages | 6 |
Journal | Journal of Optoelectronics and Advanced Materials |
Volume | 2 |
Issue number | 2 |
State | Published - 1 Jan 2000 |
Keywords
- Chalcogenide glassy films
- Chalcogenide photoresist
- Microlens arrays
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering