Infrared microlens arrays based on chalcogenide photoresist, fabricated by thermal reflow process

N. P. Eisenberg, M. Klebanov, V. Lyubin, M. Manevich, S. Noach

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A maximum sag limited to 1.3 μm is achieved when using chalcogenide glassy (ChG) films of the As-S or As-Se systems for fabrication of IR microlens arrays applying the modified proximity method, the gray scale, or continuous tone photolithography with classical UV exposure sources. Using the thermal reflow method one can extend this range. For realization of this method, a new photoresist material based on a modification of the ChG film structure by the introduction of iodine atoms was developed. An AsSeI0.1 composition was selected as the optimum material giving a significant decrease in melting temperature, without appreciable loss of photosensitive properties. AFM measurements of AsSeI0.1 microlenses produced by the thermal reflow method were performed during the reflow process. The gain in the maximum sag of the microlens compared with the modified proximity method and gray scale or continuous tone lithography is about two times.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalJournal of Optoelectronics and Advanced Materials
Volume2
Issue number2
StatePublished - 1 Jan 2000

Keywords

  • Chalcogenide glassy films
  • Chalcogenide photoresist
  • Microlens arrays

Fingerprint

Dive into the research topics of 'Infrared microlens arrays based on chalcogenide photoresist, fabricated by thermal reflow process'. Together they form a unique fingerprint.

Cite this