Abstract
Thin films of lead sulfide alloyed with thorium and oxygen were deposited on GaAs substrates and processed to produce a photo-diode structure. Structural, optical and electrical characterizations indicate the presence of small nanoscale domains (NDs) that are characterized by dense packaging, high quality interfaces and a blue-shift of the energy bandgap toward the short wavelength infrared range of the spectrum. Photocurrent spectroscopy revealed a considerable photoconductivity that is correlated with excitation of carriers in the NDs of lead sulfide alloyed with thorium and oxygen. Furthermore, the appearance of a photovoltaic effect under near infrared illumination indicates a quasi-type II band alignment at the interface of the GaAs and the film of NDs.
Original language | English |
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Article number | 115202 |
Journal | Nanotechnology |
Volume | 29 |
Issue number | 11 |
DOIs | |
State | Published - 6 Feb 2018 |
Keywords
- infrared photoconductivity
- lead sulfide nanostructures
- photovoltaics
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering