InGaAs quantum well diode lasers with regrown Al containing layers for application to current confinement structures

Won Jin Choi, P. D. Dapkus, Sangmok Lee, Daniel Rich

Research output: Contribution to journalConference articlepeer-review

Abstract

Vertical cavity surface emitting lasers (VCSEL) with ultralow threshold and high efficiency are fabricated using oxide apertures formed by selective oxidation of AlAs. Studies indicate that the expected reduction in threshold with aperture size is not achieved due to current spreading and lateral carrier diffusion even for large apertures. To minimize these losses, the use of a buried active region in VCSEL is explored. To achieve the desired confinement in a buried heterostructure VCSEL, selective area growth is used. With this method, a very small thickness changes during the process and a low electrical and optical loss after growth are achieved.

Original languageEnglish
Pages (from-to)525-526
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - 1 Dec 1997
Externally publishedYes
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: 10 Nov 199713 Nov 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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