Abstract
Vertical cavity surface emitting lasers (VCSEL) with ultralow threshold and high efficiency are fabricated using oxide apertures formed by selective oxidation of AlAs. Studies indicate that the expected reduction in threshold with aperture size is not achieved due to current spreading and lateral carrier diffusion even for large apertures. To minimize these losses, the use of a buried active region in VCSEL is explored. To achieve the desired confinement in a buried heterostructure VCSEL, selective area growth is used. With this method, a very small thickness changes during the process and a low electrical and optical loss after growth are achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 525-526 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| State | Published - 1 Dec 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: 10 Nov 1997 → 13 Nov 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering