InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

X. Zhang; P. D. Dapkus; D. H. Rich; I. Kim; J. T. Kobayashi; N. P. Kobayashi

doi:10.1007/s11664-000-0086-4

InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim, J. T. Kobayashi, N. P. Kobayashi

Research output: Contribution to journal › Article › peer-review

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Abstract

InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiN_x mask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.

Original language	English
Pages (from-to)	10-14
Number of pages	5
Journal	Journal of Electronic Materials
Volume	29
Issue number	1
DOIs	https://doi.org/10.1007/s11664-000-0086-4
State	Published - 1 Jan 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN",

abstract = "InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiNx mask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.",

author = "X. Zhang and Dapkus, {P. D.} and Rich, {D. H.} and I. Kim and Kobayashi, {J. T.} and Kobayashi, {N. P.}",

note = "Funding Information: This work was supported by DARPA through the UCSB GaN consortium and by ONR.",

year = "2000",

month = jan,

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doi = "10.1007/s11664-000-0086-4",

language = "English",

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journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

AU - Zhang, X.

AU - Dapkus, P. D.

AU - Rich, D. H.

AU - Kim, I.

AU - Kobayashi, J. T.

AU - Kobayashi, N. P.

N1 - Funding Information: This work was supported by DARPA through the UCSB GaN consortium and by ONR.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiNx mask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.

AB - InGaN/GaN quantum wells (QW) were grown by metalorganic chemical vapor deposition (MOCVD) on pyramids of epitaxial lateral overgrown (ELO) GaN samples. The ELO GaN samples were grown by MOCVD on sapphire (0001) substrates that were patterned with a SiNx mask. Scanning electron microscopy and cathodoluminescence (CL) imaging experiments were performed to examine lateral variations in structure and QW luminescence energy. CL wavelength imaging (CLWI) measurements show that the QW peaks on the top of the grooves are red-shifted in comparison with the QW emission from the side walls. The results show that In atoms have migrated to the top of the pyramids during the QW growth. The effects of V/III ratio, growth temperature as well as ELO GaN stripe orientation on the QW properties are also studied.

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DO - 10.1007/s11664-000-0086-4

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SN - 0361-5235

VL - 29

SP - 10

EP - 14

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -

InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

Abstract

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