Abstract
Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 νm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.
Original language | English |
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Pages (from-to) | 2088-2102 |
Number of pages | 15 |
Journal | Journal Physics D: Applied Physics |
Volume | 38 |
Issue number | 13 |
DOIs | |
State | Published - 7 Jul 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films