InP based lasers and optical amplifiers with wire-/dot-like active regions

J. P. Reithmaier; A. Somers; S. Deubert; R. Schwertberger; W. Kaiser; A. Forchel; M. Calligaro; P. Resneau; O. Parillaud; S. Bansropun; M. Krakowski; R. Alizon; D. Hadass; A. Bilenca; H. Dery; V. Mikhelashvili; G. Eisenstein; M. Gioannini; I. Montrosset; T. W. Berg; M. Van Der Poel; J. Mørk; B. Tromborg

doi:10.1088/0022-3727/38/13/004

InP based lasers and optical amplifiers with wire-/dot-like active regions

J. P. Reithmaier
, A. Somers
, S. Deubert
, R. Schwertberger
, W. Kaiser
, A. Forchel
, M. Calligaro
, P. Resneau
, O. Parillaud
, S. Bansropun
, M. Krakowski
, R. Alizon
, D. Hadass
, A. Bilenca
, H. Dery
, V. Mikhelashvili
, G. Eisenstein
, M. Gioannini
, I. Montrosset
, T. W. Berg

M. Van Der Poel, J. Mørk, B. Tromborg

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 νm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

Original language	English
Pages (from-to)	2088-2102
Number of pages	15
Journal	Journal of Physics D: Applied Physics
Volume	38
Issue number	13
DOIs	https://doi.org/10.1088/0022-3727/38/13/004
State	Published - 7 Jul 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/38/13/004

Cite this

Reithmaier, J. P., Somers, A., Deubert, S., Schwertberger, R., Kaiser, W., Forchel, A., Calligaro, M., Resneau, P., Parillaud, O., Bansropun, S., Krakowski, M., Alizon, R., Hadass, D., Bilenca, A., Dery, H., Mikhelashvili, V., Eisenstein, G., Gioannini, M., Montrosset, I., ... Tromborg, B. (2005). InP based lasers and optical amplifiers with wire-/dot-like active regions. Journal of Physics D: Applied Physics, 38(13), 2088-2102. https://doi.org/10.1088/0022-3727/38/13/004

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title = "InP based lasers and optical amplifiers with wire-/dot-like active regions",

abstract = "Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 νm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.",

author = "Reithmaier, \{J. P.\} and A. Somers and S. Deubert and R. Schwertberger and W. Kaiser and A. Forchel and M. Calligaro and P. Resneau and O. Parillaud and S. Bansropun and M. Krakowski and R. Alizon and D. Hadass and A. Bilenca and H. Dery and V. Mikhelashvili and G. Eisenstein and M. Gioannini and I. Montrosset and Berg, \{T. W.\} and \{Van Der Poel\}, M. and J. M{\o}rk and B. Tromborg",

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month = jul,

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doi = "10.1088/0022-3727/38/13/004",

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Reithmaier, JP, Somers, A, Deubert, S, Schwertberger, R, Kaiser, W, Forchel, A, Calligaro, M, Resneau, P, Parillaud, O, Bansropun, S, Krakowski, M, Alizon, R, Hadass, D, Bilenca, A, Dery, H, Mikhelashvili, V, Eisenstein, G, Gioannini, M, Montrosset, I, Berg, TW, Van Der Poel, M, Mørk, J & Tromborg, B 2005, 'InP based lasers and optical amplifiers with wire-/dot-like active regions', Journal of Physics D: Applied Physics, vol. 38, no. 13, pp. 2088-2102. https://doi.org/10.1088/0022-3727/38/13/004

TY - JOUR

T1 - InP based lasers and optical amplifiers with wire-/dot-like active regions

AU - Reithmaier, J. P.

AU - Somers, A.

AU - Deubert, S.

AU - Schwertberger, R.

AU - Kaiser, W.

AU - Forchel, A.

AU - Calligaro, M.

AU - Resneau, P.

AU - Parillaud, O.

AU - Bansropun, S.

AU - Krakowski, M.

AU - Alizon, R.

AU - Hadass, D.

AU - Bilenca, A.

AU - Dery, H.

AU - Mikhelashvili, V.

AU - Eisenstein, G.

AU - Gioannini, M.

AU - Montrosset, I.

AU - Berg, T. W.

AU - Van Der Poel, M.

AU - Mørk, J.

AU - Tromborg, B.

PY - 2005/7/7

Y1 - 2005/7/7

N2 - Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 νm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

AB - Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 νm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

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JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 13

ER -

InP based lasers and optical amplifiers with wire-/dot-like active regions

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