InP based lasers and optical amplifiers with wire-/dot-like active regions

J. P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. Alizon, D. Hadass, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, T. W. BergM. Van Der Poel, J. Mørk, B. Tromborg

Research output: Contribution to journalArticlepeer-review

138 Scopus citations


Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 νm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

Original languageEnglish
Pages (from-to)2088-2102
Number of pages15
JournalJournal Physics D: Applied Physics
Issue number13
StatePublished - 7 Jul 2005
Externally publishedYes


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