Information on a method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and heat spreading device to the laser is presented. Theoretical and experimental results of the thermoelectric properties of Ga//1// minus //xAl//xAs are presented. Also, the fabrication techniques used to obtain the monolithically Peltier cooled laser diode are given. This cooling method both reduces and stabilizes the laser junction temperature to minimize such deleterious effects as wavelength drift due to heat. Experimental results reveal a 14 percent increase in emitted power due to passive heat spreading and further 8 percent if its Peltier cooler is operated.
|State||Published - 1 Dec 1985|