Interaction of boron and phosphorus impurities in silicon nanowires during low-temperature ozone oxidation

Naoki Fukata; Jun Kaminaga; Ryo Takiguchi; Riccardo Rurali; Mrinal Dutta; Kouichi Murakami

doi:10.1021/jp406713p

Interaction of boron and phosphorus impurities in silicon nanowires during low-temperature ozone oxidation

Naoki Fukata, Jun Kaminaga, Ryo Takiguchi, Riccardo Rurali, Mrinal Dutta, Kouichi Murakami

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline regions close to the Si/SiO₂ interface. Here we report on micro-Raman scattering and electron spin resonance (ESR) measurements showing that B atoms can be stabilized at the crystalline Si core region in codped SiNWs with average diameters of 20-30 nm because of the strong interaction between B and P atoms during thermal oxidation below 800 C. Theoretical calculation clearly demonstrated the effect of B-P pairing, which can stabilize the B atoms in the Si side. In the B-P pairing configuration, dopant passivation - beyond simple compensation - occurs, making the impurities electrically inactive.

Original language	English
Pages (from-to)	20300-20307
Number of pages	8
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	39
DOIs	https://doi.org/10.1021/jp406713p
State	Published - 3 Oct 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/jp406713p

Cite this

@article{e102079d7a75447ebb2f243828889ba2,

title = "Interaction of boron and phosphorus impurities in silicon nanowires during low-temperature ozone oxidation",

abstract = "In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline regions close to the Si/SiO2 interface. Here we report on micro-Raman scattering and electron spin resonance (ESR) measurements showing that B atoms can be stabilized at the crystalline Si core region in codped SiNWs with average diameters of 20-30 nm because of the strong interaction between B and P atoms during thermal oxidation below 800 C. Theoretical calculation clearly demonstrated the effect of B-P pairing, which can stabilize the B atoms in the Si side. In the B-P pairing configuration, dopant passivation - beyond simple compensation - occurs, making the impurities electrically inactive.",

author = "Naoki Fukata and Jun Kaminaga and Ryo Takiguchi and Riccardo Rurali and Mrinal Dutta and Kouichi Murakami",

year = "2013",

month = oct,

day = "3",

doi = "10.1021/jp406713p",

language = "English",

volume = "117",

pages = "20300--20307",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "39",

}

TY - JOUR

T1 - Interaction of boron and phosphorus impurities in silicon nanowires during low-temperature ozone oxidation

AU - Fukata, Naoki

AU - Kaminaga, Jun

AU - Takiguchi, Ryo

AU - Rurali, Riccardo

AU - Dutta, Mrinal

AU - Murakami, Kouichi

PY - 2013/10/3

Y1 - 2013/10/3

N2 - In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline regions close to the Si/SiO2 interface. Here we report on micro-Raman scattering and electron spin resonance (ESR) measurements showing that B atoms can be stabilized at the crystalline Si core region in codped SiNWs with average diameters of 20-30 nm because of the strong interaction between B and P atoms during thermal oxidation below 800 C. Theoretical calculation clearly demonstrated the effect of B-P pairing, which can stabilize the B atoms in the Si side. In the B-P pairing configuration, dopant passivation - beyond simple compensation - occurs, making the impurities electrically inactive.

AB - In doped Si nanowires (SiNWs) boron (B) atoms segregate to the surface oxide layers during thermal oxidation, while phosphorus (P) atoms preferentially pile up in Si crystalline regions close to the Si/SiO2 interface. Here we report on micro-Raman scattering and electron spin resonance (ESR) measurements showing that B atoms can be stabilized at the crystalline Si core region in codped SiNWs with average diameters of 20-30 nm because of the strong interaction between B and P atoms during thermal oxidation below 800 C. Theoretical calculation clearly demonstrated the effect of B-P pairing, which can stabilize the B atoms in the Si side. In the B-P pairing configuration, dopant passivation - beyond simple compensation - occurs, making the impurities electrically inactive.

UR - http://www.scopus.com/inward/record.url?scp=84885126360&partnerID=8YFLogxK

U2 - 10.1021/jp406713p

DO - 10.1021/jp406713p

M3 - Article

AN - SCOPUS:84885126360

SN - 1932-7447

VL - 117

SP - 20300

EP - 20307

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 39

ER -

Interaction of boron and phosphorus impurities in silicon nanowires during low-temperature ozone oxidation

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this