Interface effects in highly oriented films of the Heusler alloy Co 2MnSi on GaAs(001)

L. J. Singh; Z. H. Barber; A. Kohn; A. K. Petford-Long; Y. Miyoshi; Y. Bugoslavsky; L. F. Cohen

doi:10.1063/1.2161417

Interface effects in highly oriented films of the Heusler alloy Co ₂MnSi on GaAs(001)

L. J. Singh, Z. H. Barber, A. Kohn, A. K. Petford-Long, Y. Miyoshi, Y. Bugoslavsky, L. F. Cohen

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36 Scopus citations

Abstract

Highly (001) oriented thin films of Co2 MnSi have been grown on lattice-matched GaAs(001) without a buffer layer. Stoichiometric films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 μΩ cm at 4.2 K) and the lowest coercivity (14 Oe). Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the 〈110〉 directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface. Interfacial reactions resulted in the formation of an epitaxial Mn-As region and a thin interfacial layer that was Co-Ga rich. This prevented the desired lattice matching and resulted in films with a saturation magnetization slightly below the bulk value. In spite of this, the spin polarization of the free surface was measured to be 55%, similar to bulk material.

Original language	English
Article number	013904
Journal	Journal of Applied Physics
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.2161417
State	Published - 24 Jan 2006
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.2161417

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@article{c3037d1120d14f4b8df5af1fdf5b6dd8,

title = "Interface effects in highly oriented films of the Heusler alloy Co 2MnSi on GaAs(001)",

abstract = "Highly (001) oriented thin films of Co2 MnSi have been grown on lattice-matched GaAs(001) without a buffer layer. Stoichiometric films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 μΩ cm at 4.2 K) and the lowest coercivity (14 Oe). Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the 〈110〉 directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface. Interfacial reactions resulted in the formation of an epitaxial Mn-As region and a thin interfacial layer that was Co-Ga rich. This prevented the desired lattice matching and resulted in films with a saturation magnetization slightly below the bulk value. In spite of this, the spin polarization of the free surface was measured to be 55%, similar to bulk material.",

author = "Singh, {L. J.} and Barber, {Z. H.} and A. Kohn and Petford-Long, {A. K.} and Y. Miyoshi and Y. Bugoslavsky and Cohen, {L. F.}",

note = "Funding Information: This work was supported by the Engineering and Physical Sciences Research Council, UK. The authors are grateful to W. Eerenstein for help with the high-resolution x-ray diffraction work and to A. Ionescu for useful discussions.",

year = "2006",

month = jan,

day = "24",

doi = "10.1063/1.2161417",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Interface effects in highly oriented films of the Heusler alloy Co 2MnSi on GaAs(001)

AU - Singh, L. J.

AU - Barber, Z. H.

AU - Kohn, A.

AU - Petford-Long, A. K.

AU - Miyoshi, Y.

AU - Bugoslavsky, Y.

AU - Cohen, L. F.

N1 - Funding Information: This work was supported by the Engineering and Physical Sciences Research Council, UK. The authors are grateful to W. Eerenstein for help with the high-resolution x-ray diffraction work and to A. Ionescu for useful discussions.

PY - 2006/1/24

Y1 - 2006/1/24

N2 - Highly (001) oriented thin films of Co2 MnSi have been grown on lattice-matched GaAs(001) without a buffer layer. Stoichiometric films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 μΩ cm at 4.2 K) and the lowest coercivity (14 Oe). Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the 〈110〉 directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface. Interfacial reactions resulted in the formation of an epitaxial Mn-As region and a thin interfacial layer that was Co-Ga rich. This prevented the desired lattice matching and resulted in films with a saturation magnetization slightly below the bulk value. In spite of this, the spin polarization of the free surface was measured to be 55%, similar to bulk material.

AB - Highly (001) oriented thin films of Co2 MnSi have been grown on lattice-matched GaAs(001) without a buffer layer. Stoichiometric films grown at the highest substrate temperature of 689 K showed the lowest resistivity (33 μΩ cm at 4.2 K) and the lowest coercivity (14 Oe). Twofold in-plane magnetic anisotropy was observed due to the inequivalence of the 〈110〉 directions, and this was attributed to the nature of the bonding at the reconstructed GaAs surface. Interfacial reactions resulted in the formation of an epitaxial Mn-As region and a thin interfacial layer that was Co-Ga rich. This prevented the desired lattice matching and resulted in films with a saturation magnetization slightly below the bulk value. In spite of this, the spin polarization of the free surface was measured to be 55%, similar to bulk material.

UR - http://www.scopus.com/inward/record.url?scp=30844441870&partnerID=8YFLogxK

U2 - 10.1063/1.2161417

DO - 10.1063/1.2161417

M3 - Article

AN - SCOPUS:30844441870

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013904

ER -

Interface effects in highly oriented films of the Heusler alloy Co ₂MnSi on GaAs(001)

Abstract

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