Interface formation and growth of InSb on Si (100)

GE Franklin, DH Rich, Hawoong Hong, T Miller, T-C Chiang

Research output: Contribution to journalArticlepeer-review

46 Scopus citations


High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4° off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410 °C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.
Original languageEnglish GB
Pages (from-to)3426
Number of pages1
JournalPhysical Review B
Issue number7
StatePublished - 1992

ASJC Scopus subject areas

  • Condensed Matter Physics


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