Interface formation and growth of InSb on Si(100)

G. E. Franklin; D. H. Rich; Hawoong Hong; T. Miller; T. C. Chiang

doi:10.1103/PhysRevB.45.3426

Interface formation and growth of InSb on Si(100)

G. E. Franklin, D. H. Rich, Hawoong Hong, T. Miller, T. C. Chiang

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51 Scopus citations

Abstract

High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4°off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410°C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.

Original language	English
Pages (from-to)	3426-3434
Number of pages	9
Journal	Physical Review B
Volume	45
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.45.3426
State	Published - 1 Jan 1992
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.45.3426

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title = "Interface formation and growth of InSb on Si(100)",

abstract = "High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4°off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410°C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.",

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year = "1992",

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AU - Franklin, G. E.

AU - Rich, D. H.

AU - Hong, Hawoong

AU - Miller, T.

AU - Chiang, T. C.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4°off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410°C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.

AB - High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4°off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410°C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.

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Interface formation and growth of InSb on Si(100)

Abstract

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