Interface study of molybdenum oxide thin films on n- and p-type crystalline silicon surface

Keyphrases

• Silicon Surface 100%
• P-type 100%
• Crystalline Silicon 100%
• Interface Studies 100%
• Molybdenum Oxide Thin Films 100%
• Barrier Height 66%
• Substoichiometric 66%
• Molybdenum Oxide 66%
• UV-VIS Spectroscopy 33%
• Optical Properties 33%
• Room Temperature 33%
• DC Power 33%
• Visible Spectrum 33%
• Optical Band Gap 33%
• XPS Study 33%
• FTIR Study 33%
• Silicon Solar Cells 33%
• Si Substrate 33%
• Current-voltage 33%
• Capacitance-voltage Measurements 33%
• N-Si 33%
• Interfacial Layer 33%
• Interface Traps 33%
• Deposited Film 33%
• Rectifying Characteristic 33%
• I-V Measurement 33%
• Optical Transmittance 33%
• DC Reactive Magnetron Sputtering 33%
• Gas Atmosphere 33%
• NIR Spectroscopy 33%
• Molybdenum Target 33%
• Interface Analysis 33%
• Carrier Selective Layers 33%

Engineering

• Thin Films 100%
• Silicon Surface 100%
• Crystalline Silicon 100%
• Barrier Height 66%
• Deposited Film 33%
• Room Temperature 33%
• Si Substrate 33%
• Interfacial Layer 33%
• Mixed Phase 33%
• Reactive Sputtering 33%
• Solar Cell 33%
• Interface Trap 33%
• Electrical Measurement 33%
• Optical band gaps 33%

Material Science

• Thin Films 100%
• Silicon 100%
• Surface (Surface Science) 100%
• Molybdenum Oxide 100%
• Film 40%
• Density 20%
• Capacitance 20%
• Molybdenum 20%
• Optical Property 20%
• Silicon Solar Cell 20%
• Near Infrared Spectroscopy 20%