Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)

Michael Shandalov; Avraham Rozenblat; Nir Kedem; Ronit Popovitz-Biro; Yuval Golan

doi:10.1002/sia.2811

Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)

Michael Shandalov, Avraham Rozenblat, Nir Kedem, Ronit Popovitz-Biro, Yuval Golan

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga ₂O₃ at the PbSe/GaAs interface.

Original language	English
Pages (from-to)	939-943
Number of pages	5
Journal	Surface and Interface Analysis
Volume	40
Issue number	5
DOIs	https://doi.org/10.1002/sia.2811
State	Published - 1 May 2008

Keywords

Chemical deposition
Composition
GaAs
Interface
Microstructure
PbSe

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1002/sia.2811

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title = "Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)",

abstract = "The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2O3 at the PbSe/GaAs interface.",

keywords = "Chemical deposition, Composition, GaAs, Interface, Microstructure, PbSe",

author = "Michael Shandalov and Avraham Rozenblat and Nir Kedem and Ronit Popovitz-Biro and Yuval Golan",

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AU - Shandalov, Michael

AU - Rozenblat, Avraham

AU - Kedem, Nir

AU - Popovitz-Biro, Ronit

AU - Golan, Yuval

PY - 2008/5/1

Y1 - 2008/5/1

N2 - The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2O3 at the PbSe/GaAs interface.

AB - The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2O3 at the PbSe/GaAs interface.

KW - Chemical deposition

KW - Composition

KW - GaAs

KW - Interface

KW - Microstructure

KW - PbSe

UR - http://www.scopus.com/inward/record.url?scp=44149121928&partnerID=8YFLogxK

U2 - 10.1002/sia.2811

DO - 10.1002/sia.2811

M3 - Article

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SN - 0142-2421

VL - 40

SP - 939

EP - 943

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 5

ER -

Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)

Abstract

Keywords

ASJC Scopus subject areas

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