Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)

Michael Shandalov, Avraham Rozenblat, Nir Kedem, Ronit Popovitz-Biro, Yuval Golan

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga 2O3 at the PbSe/GaAs interface.

Original languageEnglish
Pages (from-to)939-943
Number of pages5
JournalSurface and Interface Analysis
Volume40
Issue number5
DOIs
StatePublished - 1 May 2008

Keywords

  • Chemical deposition
  • Composition
  • GaAs
  • Interface
  • Microstructure
  • PbSe

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