Interfacial design strategies for stable and high-performance perovskite/silicon tandem solar cells on industrial silicon cells

Reducing interfacial non-radiative recombination at the perovskite/electron transport layer interface remains a critical challenge for achieving high performance and stable perovskite/silicon tandem solar cells. This study analyzes energy losses and design bilayer passivation for enhancing the performance and durability of tandem solar cells. Our experimental results confirm that, the bilayer passivation strategy, precisely modulates perovskite energy level alignment, reduces defect density, and suppresses interfacial non-radiative recombination. Moreover, the ALD-AlO_x forms a homogeneous film on the perovskite grain surface while creating island-like structures at grain boundaries, enabling nanoscale local contact areas for subsequent PDAI₂ deposition. While serving as an ion diffusion barrier, this structure facilitates moderate n-type doping and enhances charge extraction and transport efficiency. Monolithic perovskite/silicon tandem solar cells incorporating AlO_x/PDAI₂ treatment achieve a power conversion efficiency of 31.6% (certified at 30.8%), utilizing industrial silicon bottom cells fabricated with Q CELLS’ Q.ANTUM technology. Furthermore, our device exhibits 95% efficiency retention after 1000 hours of maximum power point tracking at 25 ^oC.