Interfacial interaction and wetting in the Ta2O 5/Cu-Al system

Orel Kish, Natalya Froumin, Michael Aizenshtein, Nachum Frage

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3 Scopus citations

Abstract

Wettability and interfacial interaction of the Ta2O 5/Cu-Al system were studied. Pure Cu does not wet the Ta 2O5 substrate, and improved spreading is achieved when relatively a high fraction of the active element (∼40 at.% Al) was added. The Al2O3 and AlTaO4 phases were observed at the Ta2O5/Cu-Al interface. A thermodynamic evaluation allowed us to suggest that the lack of wetting bellow 40 at.% Al is due to the presence of a native oxide, which covers the drop. The conditions of the native oxide decomposition and the formation of the volatile Al2O suboxide strongly depend on the vacuum level during sessile drop experiments and the composition of the Cu-Al alloy. In our case, Al contents greater than 40% provides thermodynamic conditions for the formation of Al2O (as a result of Al reaction with Al2O3) and the drop spreading. It was suggested that the final contact angle in the Ta2O 5/Cu-Al system (50°) is determined by Ta adsorption on the newly formed alumina interlayer.

Original languageEnglish
Pages (from-to)1551-1554
Number of pages4
JournalJournal of Materials Engineering and Performance
Volume23
Issue number5
DOIs
StatePublished - 1 Jan 2014

Keywords

  • interfaces
  • tantalum pentoxide
  • thermodynamics
  • wetting

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