Interfacial microstructure in Si-on-sapphire heterostructure

E. Gartstein; D. Mogilyanski; N. Frumin

doi:10.1016/S0022-0248(99)00216-X

Interfacial microstructure in Si-on-sapphire heterostructure

E. Gartstein, D. Mogilyanski, N. Frumin

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A combination of experimental techniques: high-resolution X-ray diffraction (HXRD), high-resolution cross-sectional electron microscopy (HREM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to elucidate the interfacial microstructure in Si-on-sapphire system. The observed structural features and their role in the strain relieving mechanism at the interface are discussed. Chemical analysis shows that to some extent bonds like in aluminosilicates and SiO₂ are formed in the interfacial layer.

Original language	English
Pages (from-to)	64-70
Number of pages	7
Journal	Journal of Crystal Growth
Volume	205
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(99)00216-X
State	Published - 15 Aug 1999

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(99)00216-X

Cite this

@article{54e5d92a406049df84ab57deff064a76,

title = "Interfacial microstructure in Si-on-sapphire heterostructure",

abstract = "A combination of experimental techniques: high-resolution X-ray diffraction (HXRD), high-resolution cross-sectional electron microscopy (HREM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to elucidate the interfacial microstructure in Si-on-sapphire system. The observed structural features and their role in the strain relieving mechanism at the interface are discussed. Chemical analysis shows that to some extent bonds like in aluminosilicates and SiO2 are formed in the interfacial layer.",

author = "E. Gartstein and D. Mogilyanski and N. Frumin",

year = "1999",

month = aug,

day = "15",

doi = "10.1016/S0022-0248(99)00216-X",

language = "English",

volume = "205",

pages = "64--70",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Interfacial microstructure in Si-on-sapphire heterostructure

AU - Gartstein, E.

AU - Mogilyanski, D.

AU - Frumin, N.

PY - 1999/8/15

Y1 - 1999/8/15

N2 - A combination of experimental techniques: high-resolution X-ray diffraction (HXRD), high-resolution cross-sectional electron microscopy (HREM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to elucidate the interfacial microstructure in Si-on-sapphire system. The observed structural features and their role in the strain relieving mechanism at the interface are discussed. Chemical analysis shows that to some extent bonds like in aluminosilicates and SiO2 are formed in the interfacial layer.

AB - A combination of experimental techniques: high-resolution X-ray diffraction (HXRD), high-resolution cross-sectional electron microscopy (HREM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to elucidate the interfacial microstructure in Si-on-sapphire system. The observed structural features and their role in the strain relieving mechanism at the interface are discussed. Chemical analysis shows that to some extent bonds like in aluminosilicates and SiO2 are formed in the interfacial layer.

UR - http://www.scopus.com/inward/record.url?scp=0032598205&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00216-X

DO - 10.1016/S0022-0248(99)00216-X

M3 - Article

AN - SCOPUS:0032598205

SN - 0022-0248

VL - 205

SP - 64

EP - 70

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Interfacial microstructure in Si-on-sapphire heterostructure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this