Abstract
A possibility of intermediately bound excitons in semiconductors doped with transition metal impurities is considered. These sort of excitons can appear in hexagonal (wurtzit type) semiconductors due to strong hybridization of the conduction band states and d impurity states. In tetrahedral (zinc blende) semiconductors this hybridization is strongly suppressed due to a symmetry consideration. This model allows one to explain striking differences measured in the exciton spectra and values of the g-factors of two presumably similar systems ZnS:Ni (zinc blende type) and CdS:Ni (wurtzit type).
| Original language | English |
|---|---|
| Pages (from-to) | 755-760 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Issue number | pt 2 |
| State | Published - 1 Dec 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn Duration: 23 Jul 1995 → 28 Jul 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering