The effects of interstitial carbon on the electronic and mechanical properties of copper are studied theoretically. Semiempirical methodology, atomistic simulations and first-principles density-functional embedded-cluster schemes are combined to extract some understanding of the diffusion process and related degradation of Cu-C composite materials under extremes of temperature and stress. High-resolution scanning electron microscopy results are presented, which demonstrate the existence of a solid solution zone at the Cu-C interface.
|Number of pages||16|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - 1 Jan 1999|
ASJC Scopus subject areas
- Chemical Engineering (all)
- Physics and Astronomy (all)