Investigation of dielectric-semiconductor interface in MIS structures based on p-Hg0.8Cd0.2Te

V. Damnjanović, J. M. Elazar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this paper we describes technological processes for the stabilization of interface between p-Hg1-xCdxTe and dielectric. Native oxide and native fluoride, as well as Al2O3 and SiO 2, have been applied as dielectrics. Influence of technological parameters used in dielectric layers production on interface charge densities was studied. Characterization of the produced structures has been carried out by analyzing their C/V diagrams. Based on the characterization results, the choice of the most suitable values of technological parameters for each dielectric has been made, thus enabling achievement of low values of the interface charges density. Produced tunnel MIS photo detectors show clearly exhibited dependence of Schottky barrier height on the metal used and specific detectivity as high as 5×1010cm·Hz1/2W-1.

Original languageEnglish
Title of host publication2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings
Pages131-133
Number of pages3
DOIs
StatePublished - 9 Aug 2010
Externally publishedYes
Event2010 27th International Conference on Microelectronics, MIEL 2010 - Nis, Serbia
Duration: 16 May 201019 May 2010

Publication series

Name2010 27th International Conference on Microelectronics, MIEL 2010 - Proceedings

Conference

Conference2010 27th International Conference on Microelectronics, MIEL 2010
Country/TerritorySerbia
CityNis
Period16/05/1019/05/10

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