Investigation of ion-beam modified silicon by photoacoustic method

D. M. Todorović, P. M. Nikolić, J. Elazar, M. Smiljanić, A. I. Bojičić, D. G. Vasiljević-Radović, K. T. Radulović

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.

Original languageEnglish
Title of host publication2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers
Pages247-250
Number of pages4
ISBN (Print)0780352351, 9780780352353
DOIs
StatePublished - 1 Jan 2000
Externally publishedYes
Event2000 22nd International Conference on Microelectronics, MIEL 2000 - Nis, Serbia
Duration: 14 May 200017 May 2000

Publication series

Name2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
Volume1

Conference

Conference2000 22nd International Conference on Microelectronics, MIEL 2000
Country/TerritorySerbia
CityNis
Period14/05/0017/05/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • General Engineering

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