INVESTIGATION OF THE BAND STRUCTURE OF Bi2Te3 BY DETERMINATION OF THE MAGNETIC-FIELD DEPENDENCES OF THE TRANSPORT COEFFICIENTS.

Z. M. Dashevskii; S. A. Nemov; I. V. Sgibnev

INVESTIGATION OF THE BAND STRUCTURE OF Bi₂Te₃ BY DETERMINATION OF THE MAGNETIC-FIELD DEPENDENCES OF THE TRANSPORT COEFFICIENTS.

Z. M. Dashevskii, S. A. Nemov, I. V. Sgibnev

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical conductivity, electrical resistivity, and Hall coefficient of single-crystal n- and p-type Bi//2Te//3 films were determined as a function of an external magnetic field (up to 7 T). Formulas derived by the authors were employed to analyze the experimental results. Up to hole densities p APP 1STH 1 multiplied by (times) 10**1**9 cm** minus **3 the dependences of the transport coefficients on the magnetic field could be described by the one-band model of Drabble and Wolfe. An additional heavy-electron extremum had to be allowed for in the description of the properties of n-type Bi//2Te//3.

Original language	English
Pages (from-to)	678-680
Number of pages	3
Journal	Soviet physics. Semiconductors
Volume	15
Issue number	6
State	Published - 1 Jan 1981

ASJC Scopus subject areas

General Engineering

Cite this

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title = "INVESTIGATION OF THE BAND STRUCTURE OF Bi2Te3 BY DETERMINATION OF THE MAGNETIC-FIELD DEPENDENCES OF THE TRANSPORT COEFFICIENTS.",

abstract = "The electrical conductivity, electrical resistivity, and Hall coefficient of single-crystal n- and p-type Bi//2Te//3 films were determined as a function of an external magnetic field (up to 7 T). Formulas derived by the authors were employed to analyze the experimental results. Up to hole densities p APP 1STH 1 multiplied by (times) 10**1**9 cm** minus **3 the dependences of the transport coefficients on the magnetic field could be described by the one-band model of Drabble and Wolfe. An additional heavy-electron extremum had to be allowed for in the description of the properties of n-type Bi//2Te//3.",

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year = "1981",

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AU - Nemov, S. A.

AU - Sgibnev, I. V.

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N2 - The electrical conductivity, electrical resistivity, and Hall coefficient of single-crystal n- and p-type Bi//2Te//3 films were determined as a function of an external magnetic field (up to 7 T). Formulas derived by the authors were employed to analyze the experimental results. Up to hole densities p APP 1STH 1 multiplied by (times) 10**1**9 cm** minus **3 the dependences of the transport coefficients on the magnetic field could be described by the one-band model of Drabble and Wolfe. An additional heavy-electron extremum had to be allowed for in the description of the properties of n-type Bi//2Te//3.

AB - The electrical conductivity, electrical resistivity, and Hall coefficient of single-crystal n- and p-type Bi//2Te//3 films were determined as a function of an external magnetic field (up to 7 T). Formulas derived by the authors were employed to analyze the experimental results. Up to hole densities p APP 1STH 1 multiplied by (times) 10**1**9 cm** minus **3 the dependences of the transport coefficients on the magnetic field could be described by the one-band model of Drabble and Wolfe. An additional heavy-electron extremum had to be allowed for in the description of the properties of n-type Bi//2Te//3.

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JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

IS - 6

ER -

INVESTIGATION OF THE BAND STRUCTURE OF Bi₂Te₃ BY DETERMINATION OF THE MAGNETIC-FIELD DEPENDENCES OF THE TRANSPORT COEFFICIENTS.

Abstract

ASJC Scopus subject areas

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