INVESTIGATION OF THE BAND STRUCTURE OF Bi₂Te₃ BY DETERMINATION OF THE MAGNETIC-FIELD DEPENDENCES OF THE TRANSPORT COEFFICIENTS.

The electrical conductivity, electrical resistivity, and Hall coefficient of single-crystal n- and p-type Bi//2Te//3 films were determined as a function of an external magnetic field (up to 7 T). Formulas derived by the authors were employed to analyze the experimental results. Up to hole densities p APP 1STH 1 multiplied by (times) 10**1**9 cm** minus **3 the dependences of the transport coefficients on the magnetic field could be described by the one-band model of Drabble and Wolfe. An additional heavy-electron extremum had to be allowed for in the description of the properties of n-type Bi//2Te//3.