INVESTIGATION OF THE COMPLEX STRUCTURE OF BAND EDGES AND OF THE MECHANISM OF CARRIER SCATTERING IN Bi - Sb - Te SINGLE CRYSTALS.

M. P. Volotskii, T. S. Gudkin, Z. M. Dashevskii, V. I. Kaidanov, I. V. Sgibnev

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Abstract

Study of the transport coefficients of n- and p-type Bi//2Te//3, p-type Sb//2Te//3 and p-type Bi//0//. //5Sb//1//. //5Te//3 in the 77 - 400K temperature range was carried out determining the Hall coefficient R, electric conductivity sigma , thermoelectric power alpha and transverse Hernst-Ettingshausen effect Q in electric and temperature fields parallel to the substrate and in a magnetic field perpendicular to the substrate.

Original languageEnglish
Pages (from-to)682-683
Number of pages2
JournalSemiconductors
Volume8
Issue number5
StatePublished - 1 Jan 1974

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