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Investigation of the interface roughness in a LPOMVPE grown AlAs/GaAs multilayer

  • D. Mogilyanski
  • , E. Gartstein
  • , M. Blumin
  • , D. Fekete
  • , R. Opitz
  • , R. Kohler

    Research output: Contribution to journalConference articlepeer-review

    2 Scopus citations

    Abstract

    Characteristics of the interface roughness in a low-pressure organometallic vapour phase epitaxy (LPOMVPE) grown AlAs/GaAs multilayer are studied by grazing-incidence x-ray scattering. Quantitative results are obtained by comparing experimental and theoretically calculated diffuse scattering maps. These corroborate with the features resolved by atomic force microscopy. The observed morphological features are discussed in the following sections.

    Original languageEnglish
    Pages (from-to)A239-A244
    JournalJournal of Physics D: Applied Physics
    Volume32
    Issue number10 A
    DOIs
    StatePublished - 21 May 1999
    EventProceedings of the 1998 4th Biennial Conference on High Resolution X-Ray Diffraction and Topography (XTOP) - Durham, UK
    Duration: 9 Sep 199811 Sep 1998

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Acoustics and Ultrasonics
    • Surfaces, Coatings and Films

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