Abstract
The conditions of forming a bi-layer structure of TiN/TiSi2 thin film on Si (100) substrate is studied. For this purpose two techniques of producing this structure were applied: (1) deposition of Ti on Si (100), followed by reactive sputtering to obtain TiN on top of this layer and (b) codeposition of Ti and Si on Si (100) and then deposition of TiN by reactive sputtering. Reactive sputtering was carried out in a mixture of N2/Ar with 20% N2. Using X-ray diffraction techniques, the structure of the specimens was analyzed.
Original language | English |
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Pages (from-to) | 107-112 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 402 |
State | Published - 1 Jan 1996 |
Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: 27 Nov 1995 → 30 Nov 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering