Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications

K. Kirievsky; I. Donchev; A. Kiv; D. Fuks; Y. Gelbstein

doi:10.1063/1.5121825

Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications

K. Kirievsky, I. Donchev, A. Kiv, D. Fuks, Y. Gelbstein

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Density functional theory calculations of the electronic properties of TiNiSn compound with point defects in the form of vacancies have shown that the formation of titanium vacancies may lead to n-p inversion of the type of conductivity in these materials. In this paper, the possibility of ion-induced formation of Sn clusters in TiNiSn is demonstrated. Furthermore, conditions of ionic irradiation of this compound that can lead to improvement in the thermoelectric parameters of this material are proposed.

Original language	English
Article number	155-106
Journal	Journal of Applied Physics
Volume	126
Issue number	15
DOIs	https://doi.org/10.1063/1.5121825
State	Published - 21 Oct 2019

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.5121825

Cite this

@article{35c7d119a31d4f1c82bc7f6e96fa01e0,

title = "Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications",

abstract = "Density functional theory calculations of the electronic properties of TiNiSn compound with point defects in the form of vacancies have shown that the formation of titanium vacancies may lead to n-p inversion of the type of conductivity in these materials. In this paper, the possibility of ion-induced formation of Sn clusters in TiNiSn is demonstrated. Furthermore, conditions of ionic irradiation of this compound that can lead to improvement in the thermoelectric parameters of this material are proposed.",

author = "K. Kirievsky and I. Donchev and A. Kiv and D. Fuks and Y. Gelbstein",

note = "Funding Information: Y.G. holds the Samuel Ayrton Chair in Metallurgy. This work was supported by the Israel Science Foundation (ISF) Individual Research under Grant No. 455/16. Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = oct,

day = "21",

doi = "10.1063/1.5121825",

language = "English",

volume = "126",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications

AU - Kirievsky, K.

AU - Donchev, I.

AU - Kiv, A.

AU - Fuks, D.

AU - Gelbstein, Y.

N1 - Funding Information: Y.G. holds the Samuel Ayrton Chair in Metallurgy. This work was supported by the Israel Science Foundation (ISF) Individual Research under Grant No. 455/16. Publisher Copyright: © 2019 Author(s).

PY - 2019/10/21

Y1 - 2019/10/21

N2 - Density functional theory calculations of the electronic properties of TiNiSn compound with point defects in the form of vacancies have shown that the formation of titanium vacancies may lead to n-p inversion of the type of conductivity in these materials. In this paper, the possibility of ion-induced formation of Sn clusters in TiNiSn is demonstrated. Furthermore, conditions of ionic irradiation of this compound that can lead to improvement in the thermoelectric parameters of this material are proposed.

AB - Density functional theory calculations of the electronic properties of TiNiSn compound with point defects in the form of vacancies have shown that the formation of titanium vacancies may lead to n-p inversion of the type of conductivity in these materials. In this paper, the possibility of ion-induced formation of Sn clusters in TiNiSn is demonstrated. Furthermore, conditions of ionic irradiation of this compound that can lead to improvement in the thermoelectric parameters of this material are proposed.

UR - http://www.scopus.com/inward/record.url?scp=85073769421&partnerID=8YFLogxK

U2 - 10.1063/1.5121825

DO - 10.1063/1.5121825

M3 - Article

AN - SCOPUS:85073769421

SN - 0021-8979

VL - 126

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 15

M1 - 155-106

ER -

Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this