Ion-induced n-p inversion of conductivity in TiNiSn compound for thermoelectric applications

K. Kirievsky, I. Donchev, A. Kiv, D. Fuks, Y. Gelbstein

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2 Scopus citations

Abstract

Density functional theory calculations of the electronic properties of TiNiSn compound with point defects in the form of vacancies have shown that the formation of titanium vacancies may lead to n-p inversion of the type of conductivity in these materials. In this paper, the possibility of ion-induced formation of Sn clusters in TiNiSn is demonstrated. Furthermore, conditions of ionic irradiation of this compound that can lead to improvement in the thermoelectric parameters of this material are proposed.

Original languageEnglish
Article number155-106
JournalJournal of Applied Physics
Volume126
Issue number15
DOIs
StatePublished - 21 Oct 2019

ASJC Scopus subject areas

  • Physics and Astronomy (all)

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