Ion irradiation of high ohmic resistivity thin film resistors

M. G. Abraizov; M. I. Abraizova; G. M. Prokyrets; I. A. Chaikovskii

doi:10.1016/0040-6090(91)90517-2

Ion irradiation of high ohmic resistivity thin film resistors

M. G. Abraizov, M. I. Abraizova, G. M. Prokyrets, I. A. Chaikovskii

Research output: Contribution to journal › Article › peer-review

Abstract

The results are presented of the effects of ion irradiation and irradiation alternated with heat treatment on the properties of 10%Fe-4%Ni-86%Si resistive alloy thin films manufactured by flash evaporation. It is shown that structural changes which occur in the films at an irradiation temperature of 573 K are similar to those which occur under heat treatment. The extrema which are absent on the dose vs. temperature coefficient of resistance curves are found on dose vs. resistance curves. The stability of the resistance and temperature coefficient of resistance of irradiated films depends on the dose and temperature of the irradiation. Alternation of irradiation and heat treatment causes a drop in resistance under irradiation and a rise in resistance under annealing. The electrophysical properties are influenced by the mode of deposition. The present results are compared with those obtained earlier when irradiating 37%Cr-53%Si-10%Ni alloy films with ions.

Original language	English
Pages (from-to)	71-76
Number of pages	6
Journal	Thin Solid Films
Volume	203
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(91)90517-2
State	Published - 15 Aug 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(91)90517-2

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title = "Ion irradiation of high ohmic resistivity thin film resistors",

abstract = "The results are presented of the effects of ion irradiation and irradiation alternated with heat treatment on the properties of 10%Fe-4%Ni-86%Si resistive alloy thin films manufactured by flash evaporation. It is shown that structural changes which occur in the films at an irradiation temperature of 573 K are similar to those which occur under heat treatment. The extrema which are absent on the dose vs. temperature coefficient of resistance curves are found on dose vs. resistance curves. The stability of the resistance and temperature coefficient of resistance of irradiated films depends on the dose and temperature of the irradiation. Alternation of irradiation and heat treatment causes a drop in resistance under irradiation and a rise in resistance under annealing. The electrophysical properties are influenced by the mode of deposition. The present results are compared with those obtained earlier when irradiating 37%Cr-53%Si-10%Ni alloy films with ions.",

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T1 - Ion irradiation of high ohmic resistivity thin film resistors

AU - Abraizov, M. G.

AU - Abraizova, M. I.

AU - Prokyrets, G. M.

AU - Chaikovskii, I. A.

PY - 1991/8/15

Y1 - 1991/8/15

N2 - The results are presented of the effects of ion irradiation and irradiation alternated with heat treatment on the properties of 10%Fe-4%Ni-86%Si resistive alloy thin films manufactured by flash evaporation. It is shown that structural changes which occur in the films at an irradiation temperature of 573 K are similar to those which occur under heat treatment. The extrema which are absent on the dose vs. temperature coefficient of resistance curves are found on dose vs. resistance curves. The stability of the resistance and temperature coefficient of resistance of irradiated films depends on the dose and temperature of the irradiation. Alternation of irradiation and heat treatment causes a drop in resistance under irradiation and a rise in resistance under annealing. The electrophysical properties are influenced by the mode of deposition. The present results are compared with those obtained earlier when irradiating 37%Cr-53%Si-10%Ni alloy films with ions.

AB - The results are presented of the effects of ion irradiation and irradiation alternated with heat treatment on the properties of 10%Fe-4%Ni-86%Si resistive alloy thin films manufactured by flash evaporation. It is shown that structural changes which occur in the films at an irradiation temperature of 573 K are similar to those which occur under heat treatment. The extrema which are absent on the dose vs. temperature coefficient of resistance curves are found on dose vs. resistance curves. The stability of the resistance and temperature coefficient of resistance of irradiated films depends on the dose and temperature of the irradiation. Alternation of irradiation and heat treatment causes a drop in resistance under irradiation and a rise in resistance under annealing. The electrophysical properties are influenced by the mode of deposition. The present results are compared with those obtained earlier when irradiating 37%Cr-53%Si-10%Ni alloy films with ions.

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Ion irradiation of high ohmic resistivity thin film resistors

Abstract

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