Irradiation induced pulsations of reverse biased metal oxide/silicon structures

D. Fink, A. Kiv, D. Fuks, M. Tabacnics, M. De A. Rizutto, A. De O.D. Silva, A. Chandra, V. Golovanov, M. Ivanovskaya, L. Khirunenko

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Abstract

Specific electronic features have been found in structures consisting of metal oxide layers on silicon substrates upon swift heavy ion irradiation. These features are linked to the appearance of radiation-induced negative differential resistances in the structures. In the reversed bias direction they show high frequency current pulsations at around ∼10 kHz frequency. Their amplitude increases with increasing applied voltage. The pulsation frequency also shows a small increase. The current amplitude depends on the ion fluence and flux.

Original languageEnglish
Article number083512
JournalApplied Physics Letters
Volume91
Issue number8
DOIs
StatePublished - 31 Aug 2007

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