ISSLEDOVANIE OKISLENIYA PLENOK TVERDYKH RASTVOROV (Bi, Sb)//2Te//3.

D. M. Gel'frat; Z. M. Dashevskii; N. V. Kolomoets; N. P. Potupa

ISSLEDOVANIE OKISLENIYA PLENOK TVERDYKH RASTVOROV (Bi, Sb)//2Te//3.

Translated title of the contribution: Study of the Oxidation of Films of (Bi, Sb)₂Te₃ Solid Solutions.

D. M. Gel'frat, Z. M. Dashevskii, N. V. Kolomoets, N. P. Potupa

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The theoretical possibility of studying the oxidation of semiconducting films by observing their electrophysical properties in a wide temperature range is shown. It is established that annealing of films of (Bi, Sb)//2Te//3 solid solutions in air in the temperature range from 450 to 600 degree K leads to the formation of high-resistivity intermediate layers corresponding to the composition (Bi, Sb)//2O//3. The thickness of the oxidized layer is estimated as a function of the annealing time and temperature. The oxygen diffusion coefficient in the temperature range from 473 to 585 degree K varies from 1. 5 multiplied by 10** minus **1**7 to 5 multiplied by 10** minus **1**5 cm**2/sec.

Translated title of the contribution	Study of the Oxidation of Films of (Bi, Sb)₂Te₃ Solid Solutions.
Original language	Russian
Pages (from-to)	37-41
Number of pages	5
Journal	Izv Akad Nauk SSSR Neorg Mater
Volume	15
Issue number	1
State	Published - 1 Jan 1979

ASJC Scopus subject areas

General Engineering

Cite this

@article{ad067d49742d47c1a3215e3e9c9e2a9d,

title = "ISSLEDOVANIE OKISLENIYA PLENOK TVERDYKH RASTVOROV (Bi, Sb)//2Te//3.",

abstract = "The theoretical possibility of studying the oxidation of semiconducting films by observing their electrophysical properties in a wide temperature range is shown. It is established that annealing of films of (Bi, Sb)//2Te//3 solid solutions in air in the temperature range from 450 to 600 degree K leads to the formation of high-resistivity intermediate layers corresponding to the composition (Bi, Sb)//2O//3. The thickness of the oxidized layer is estimated as a function of the annealing time and temperature. The oxygen diffusion coefficient in the temperature range from 473 to 585 degree K varies from 1. 5 multiplied by 10** minus **1**7 to 5 multiplied by 10** minus **1**5 cm**2/sec.",

author = "Gel'frat, {D. M.} and Dashevskii, {Z. M.} and Kolomoets, {N. V.} and Potupa, {N. P.}",

year = "1979",

month = jan,

day = "1",

language = "רוסית",

volume = "15",

pages = "37--41",

journal = "Izv Akad Nauk SSSR Neorg Mater",

issn = "0002-337X",

publisher = "MAIK Nauka/Interperiodica",

number = "1",

}

TY - JOUR

T1 - ISSLEDOVANIE OKISLENIYA PLENOK TVERDYKH RASTVOROV (Bi, Sb)//2Te//3.

AU - Gel'frat, D. M.

AU - Dashevskii, Z. M.

AU - Kolomoets, N. V.

AU - Potupa, N. P.

PY - 1979/1/1

Y1 - 1979/1/1

N2 - The theoretical possibility of studying the oxidation of semiconducting films by observing their electrophysical properties in a wide temperature range is shown. It is established that annealing of films of (Bi, Sb)//2Te//3 solid solutions in air in the temperature range from 450 to 600 degree K leads to the formation of high-resistivity intermediate layers corresponding to the composition (Bi, Sb)//2O//3. The thickness of the oxidized layer is estimated as a function of the annealing time and temperature. The oxygen diffusion coefficient in the temperature range from 473 to 585 degree K varies from 1. 5 multiplied by 10** minus **1**7 to 5 multiplied by 10** minus **1**5 cm**2/sec.

AB - The theoretical possibility of studying the oxidation of semiconducting films by observing their electrophysical properties in a wide temperature range is shown. It is established that annealing of films of (Bi, Sb)//2Te//3 solid solutions in air in the temperature range from 450 to 600 degree K leads to the formation of high-resistivity intermediate layers corresponding to the composition (Bi, Sb)//2O//3. The thickness of the oxidized layer is estimated as a function of the annealing time and temperature. The oxygen diffusion coefficient in the temperature range from 473 to 585 degree K varies from 1. 5 multiplied by 10** minus **1**7 to 5 multiplied by 10** minus **1**5 cm**2/sec.

UR - http://www.scopus.com/inward/record.url?scp=0018293523&partnerID=8YFLogxK

M3 - מאמר

AN - SCOPUS:0018293523

SN - 0002-337X

VL - 15

SP - 37

EP - 41

JO - Izv Akad Nauk SSSR Neorg Mater

JF - Izv Akad Nauk SSSR Neorg Mater

IS - 1

ER -

ISSLEDOVANIE OKISLENIYA PLENOK TVERDYKH RASTVOROV (Bi, Sb)//2Te//3.

Abstract

ASJC Scopus subject areas

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