Issues in modeling amorphous silicon photovoltaic modules by single-diode equivalent circuit

In this paper, the applicability of the well-known single-diode equivalent circuit to modeling amorphous silicon photovoltaic modules is questioned. It is shown that, unlike in mono-and polycrystalline modules, all of the equivalent circuit parameters are irradiation dependent. This dependence may be derived from either manufacturer-provided or measured I-V curves for different irradiation levels. In order to extract the equivalent circuit parameters, the suggested approach combines numerical solution of two transcendental and two regular algebraic equation systems with single-parameter fitting procedure. Two additional parameters are introduced to describe temperature dependence of photocurrent and diode reverse saturation current. As result, a set of seven parameters is obtained, comprehensively describing the panel performance for arbitrary ambient conditions. It is shown that characteristic curves obtained using the proposed approach match well the manufacturer-provided data for various values of temperature and irradiation.