The authors compare the performance of ITO/InP solar cells in which the ITO was deposited either by RF or ion-beam sputtering. Buried homojunctions were always formed on substrates which had been exposed to a very-low-power RF plasma before deposition of the ITO, whether the latter was performed by RF or ion-beam sputtering. However, true heterojunctions appear to be formed if only ion-beam sputtering is used. The authors have traced the difference to the formation of a type-converted surface layer which occurs in the former but not the latter case. The highest efficiency attained so far is 15. 7%, total area, measured under standardized conditions of temperature, intensity and spectral content.
|Number of pages||6|
|Journal||Conference Record of the IEEE Photovoltaic Specialists Conference|
|State||Published - 1 Dec 1985|
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering