Abstract
The authors compare the performance of ITO/InP solar cells in which the ITO was deposited either by RF or ion-beam sputtering. Buried homojunctions were always formed on substrates which had been exposed to a very-low-power RF plasma before deposition of the ITO, whether the latter was performed by RF or ion-beam sputtering. However, true heterojunctions appear to be formed if only ion-beam sputtering is used. The authors have traced the difference to the formation of a type-converted surface layer which occurs in the former but not the latter case. The highest efficiency attained so far is 15. 7%, total area, measured under standardized conditions of temperature, intensity and spectral content.
Original language | English |
---|---|
Pages (from-to) | 332-337 |
Number of pages | 6 |
Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
State | Published - 1 Dec 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering